Kentech 정보·광에너지 소재 연구실
Over the past quarter-century, gallium nitride (GaN) and related Group III-nitride (III-N) wide-bandgap semiconductor materials have garnered significant attention and consideration for electronic and photonic device fabrication due to eco-friendly high energy conversion efficiency, ruggedness, and superior transient performance. GaN-based devices offer great potential to replace conventional devices in various applications, e.g., in the global automotive industry to reduce electric energy consumption and carbon emissions which would alleviate the global warming problem.
The market for wide-bandgap power-semiconductor heterostructure field-effect transistors (HFETs), also called high electron mobility transistors (HEMTs), is expanding as these structures demonstrate improved size, weight, and power and efficiency over silicon-based power devices for electrified vehicles. These advantages arise due to favorable material properties such as high electron saturation velocity, high critical electric field, high electron mobility, and high carrier density. Rapid progress in material and fabrication technologies has enabled the development and commercialization of high power wide-bandgap semiconductor devices.
Over the last three decades, light-emitting diodes (LEDs) based on III-nitrides and their alloys, which achieved high conversion efficiencies and covered UV/blue/green spectrum, were employed in general lighting, display, vehicle illumination and hand-held devices, thanks to their advantageous characteristics of of low energy consumption, design flexibility, and long lifespans. More recently, there has been a growing interest in micro/nano LED arrays based on InGaN/GaN heterostructures due to their novel application in virtual and augmented reality (VR/AR) display, head-up display, and adaptive driving beam (ADB) for a headlamp of a vehicle.
Our research group focus on creative design & process technology for high energy conversion efficiency AlGaN/GaN power transistors and low power consumption IIII-nitrides mm-to-nano LEDs.